In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 7R ( 1996-07-01), p. 4088-
Abstract:
The densities of CF, CF 2 , and CF 3 radicals have been measured in RF CF 4 -H 2 , CHF 3 -H 2 and CHF 3 -O 2 plasmas using infrared diode laser absorption spectroscopy. In H 2 additive fluorocarbon plasmas, it was found that fluorocarbon film formation on the electrodes increases the radical densities in the plasma by reducing the surface loss probability and producing the radicals through sputtering of the fluorocarbon film. In CHF 3 -O 2 plasma, the CF radical density decreased rapidly when a small amount of O 2 gas was added due to the removal of fluorocarbon film, whereas an increase in the density of CF 3 was observed. The spatially averaged electron density has also been measured using a microwave interferometer together with the Ar * emission intensity under the same conditions as the radical measurements. The variations in the electron temperature and density are explained qualitatively by the change in the electron loss process in the gas phase induced by H 2 or O 2 admixture.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.4088
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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