In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 29, No. 1 ( 2011-01-01)
Abstract:
Hot carrier (HC) reliability of Si-passivated, Ge channel, p-channel metal-oxide-semiconductor field-effect transitors (pMOSFETs) with a physical gate length of 70 nm is investigated in this article. HCs are reported to affect the reliability of these devices more than negative bias temperature instability, which is normally considered as the most serious reliability concern for Si p-channel field effect transistors. The impact of different halo implant conditions on the HC reliability of Ge pMOSFETs is then studied. High energy and high dose halo implants, while being very effective for threshold voltage adjustment of short-channel devices, can remarkably reduce device lifetime under HC stress condition due to the enhanced electric field peak near the drain side of the channel. HC reliability, therefore, should be carefully taken into account when optimizing halo implant conditions for Ge p-channel metal-oxide-semiconductor.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2011
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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