In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 7, No. 5 ( 1989-09-01), p. 3030-3035
Abstract:
For phosphorus(P)-doped hydrogen silicon(Si:H) films produced by glow discharge decomposition with a mixture of SiH4 and PH3 gases diluted by H2 , the phosphorus concentration was measured by Auger electron spectroscopy(AES). The P concentration, doped in Si:H films which were prepared with high-power glow discharge decomposition, was lower than that in the films prepared with low-power discharge decomposition. This P concentration in Si:H films decreased with increasing in the microcrystalline phase in Si:H films. By means of this correlation, microcrystallinity of films and growth of a microcrystalline mechanism were discussed. P concentration in layers formed in very early stages of deposition was already low. Therefore, it was considered in the growth of microcrystalline process, that a core of the crystal forms on a substrate surface at first and then grows to 100 Å in a latter period. Then, segregation of P doped in an amorphous layer was observed at a top surface while the P segregation in a microcrystalline layer was not observed. This could be explained by the speculation that many free P atoms exist in an amorphous layer and segregate with ease, compared with P atoms bonded to Si atoms.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1989
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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