In:
Journal of Materials Chemistry A, Royal Society of Chemistry (RSC), Vol. 10, No. 25 ( 2022), p. 13476-13483
Abstract:
The complexity of crystal structures plays an intriguing role in manipulating properties in thermoelectrics, spintronics, and batteries. In comparison to the widely studied ternary half-Heusler thermoelectric compounds, quaternary double half-Heusler compounds are promising due to their intrinsically low lattice thermal conductivities ( κ L ). However, they have been much less investigated due to the limited material availability. In this study, we report a new double half-Heusler compound based on ZrNi(In,Sb). Upon tuning the ratio of In/Sb from 0.5/0.5 to 0.4/0.6 and reducing the nominal concentrations of Zr and Ni by 10%, we greatly reduce the intensities of the impurity-phase peaks in the diffraction patterns. An even better phase purity, in combination with an optimized power factor, is realized by substituting Co at the Ni sites. Further alloying Hf at the Zr sites enhances the point defect scattering of phonons, which yielded a minimum κ L of ∼1.8 W m −1 K −1 and a maximum zT of ∼0.5 for Zr 0.7 Hf 0.2 Ni 0.65 Co 0.25 In 0.4 Sb 0.6 at 973 K. Our work thus confirms the intrinsically low κ L of ZrNi(In,Sb) double half-Heusler compounds and indicates their promising applications upon further improving their electrical transport properties.
Type of Medium:
Online Resource
ISSN:
2050-7488
,
2050-7496
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2702232-8
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