In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12R ( 1996-12-01), p. 6320-
Abstract:
Novel techniques for electron beam (EB) direct writing are established for the development of sub-quarter micron devices. These techniques include 1) use of highly stable processes for positive and negative chemical amplification resists, 2) precise pattern size control by way of proximity effect correction using the pattern-area-density method, 3) a practical improvement technique for pattern size error at the exposure-field boundary, and 4) a novel alignment technique for a substrate covered with a heavy metal film. Successful fabrication of sub-quarter-micron test devices indicates that variable-shaped EB direct writing using these techniques is the best tool for research and development of advanced devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6320
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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