In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 11R ( 1995-11-01), p. 5989-
Abstract:
Hot electrons were generated in n-doped GaAs/AlAs multiple quantum wells by optical intersubband excitation and their energy distributions were studied at 10 K. By measuring photoluminescence (PL) spectra, the hot-electron temperature T el was quantitatively evaluated, taking into account such effects as the degenerate distribution of electrons, impurity-induced level broadening, and the distribution of holes. It was found that, when the intensity P of the excitation was 30 kW cm -2 , i.e. a few percent of the onset intensity for absorption saturation, T el increased from 10 K to 120 K while the lattice temperature remained unchanged. When P was between 10 W cm -2 and 30 kW cm -2 , the rise of T el was well explained by the balance between the photon energy absorption and the energy loss due to the LO phonon emission inside the ground subband.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.5989
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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