In:
Applied Physics Letters, AIP Publishing, Vol. 75, No. 16 ( 1999-10-18), p. 2365-2367
Abstract:
A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-length within the crystal, and thus reduces the effects of internal loss mechanisms. By combining this improved device geometry with high-efficiency multiwell active layers, record-level performance for visible-spectrum light-emitting diodes is achieved. Peak efficiencies exceeding 100 lm/W are demonstrated (100 mA dc, 300 K) for orange-emitting (λp∼610 nm) devices, with a peak luminous flux of 60 lumens (350 mA dc, 300 K). In the red wavelength regime (λp∼650 nm), peak external quantum efficiencies of 55% and 60.9% are measured under direct current and pulsed operation, respectively (100 mA, 300 K).
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1999
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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