In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6S ( 1997-06-01), p. 4038-
Abstract:
This paper presents results on the fabrication of single electron tunneling devices using silicon nanocrystals. We prepare silicon nanocrystals of uniform particle size by very-high-frequency plasma processing and deposit them on a poly-silicon electrode structure having a very small inter-electrode separation of 26–70 nm. Current-voltage ( I – V ) characteristics show Coulomb blockade and Coulomb staircase at 77 K. For very narrow electrode separation, Coulomb staircase appears in I - V characteristics even at room temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4038
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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