In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 60, No. SA ( 2021-01-01), p. SAAB09-
Abstract:
In this study, the influence of thermal budget on preparing hafnium silicate (HfSiO) and metal–insulator–semiconductor (MIS) structures with tetragonal hafnium oxide (HfO 2 ) films was investigated. Amorphous silicon (a-Si) was used as a sacrificial layer for HfSiO formation. Rapid thermal annealing (RTA) could efficiently drive the oxidation of a-Si with HfO 2 . The RTA-produced HfSiO film thicker than that produced through furnace annealing could suppress gate leakage in MIS devices, and aid in maintaining a high dielectric constant of the gate insulator. The combination of sacrificial a-Si film use and RTA application resulted in a HfSiO/HfO 2 structure (named as hybrid HfO 2 ), which demonstrated a high dielectric constant and strength (29.5 and 21.2 MV cm −1 , respectively). MIS devices integrated with this hybrid HfO 2 achieved a hysteresis value of only 0.11 V on a flat-band voltage measured at a 50 mV s −1 sweep rate with an applied voltage between −5 and 5 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abc7a0
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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