In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3B ( 2001-03-01), p. L255-
Abstract:
The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L255
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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