In:
physica status solidi (RRL) – Rapid Research Letters, Wiley, Vol. 13, No. 10 ( 2019-10)
Abstract:
A metal–insulator–metal (MIM) capacitor consisting of TiN and ZrO 2 /Al 2 O 3 /TiO 2 (ZAT) as electrodes and dielectric layer, respectively, is demonstrated for the development of next‐generation dynamic random access memory. The TiO 2 layer deposited on ZrO 2 –Al 2 O 3 exhibits a highly crystallized structure with an anatase phase and a dielectric constant of 40, resulting in a significant capacitance density enhancement compared with the conventional ZrO 2 /Al 2 O 3 /ZrO 2 (ZAZ) film. The leakage current of the ZAT film can be controlled to a level comparable with that of the ZAZ film, and the carrier conduction mechanism is dominated by the thermionic emission mechanism. Consequently, a minimum equivalent oxide thickness scaling by ≈14% can be achieved by employing ZAT, compared with the conventional ZAZ.
Type of Medium:
Online Resource
ISSN:
1862-6254
,
1862-6270
DOI:
10.1002/pssr.201900282
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2259465-6
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