In:
Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 11, No. 24 ( 2023), p. 8018-8026
Kurzfassung:
HfN x films were deposited by atomic layer deposition (ALD) using Hf[N(CH 3 )(C 2 H 5 )] 4 (TEMAHf) and NH 3 as the Hf-precursor and reactant gas, respectively. A precleaning step using TEMAHf as a reducing agent was devised to minimize the oxygen concentration in the as-deposited film. Consequently, the oxygen concentration in the film was reduced by ∼66%. In addition, the carbon impurity concentration caused by the side effects of the precleaning step and the remaining oxygen concentration were effectively reduced through post-NH 3 annealing. The oxygen concentration inside HfN x decreased as the annealing temperature increased. HfN x films annealed under 900 °C showed dielectric properties similar to hafnium oxynitride (HfO x N y ). However, films annealed over 950 °C transformed into a more electrically conducting HfN film, showing a resistivity of ∼10 6 μΩ cm.
Materialart:
Online-Ressource
ISSN:
2050-7526
,
2050-7534
Sprache:
Englisch
Verlag:
Royal Society of Chemistry (RSC)
Publikationsdatum:
2023
ZDB Id:
2702245-6
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