In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 3R ( 2012-03-01), p. 035001-
Abstract:
This study demonstrates a simple and fast method of the operation mode control for ZnO nanowire field effect transistors (FETs) with hydrogen peroxide (H 2 O 2 , 10%) solution treatment for 5–10 s. With this H 2 O 2 treatment, the surface of ZnO nanowires was roughened as confirmed by transmission electron microscopy images and the defect level-related emission was increased from photoluminescence (PL) data. Correspondingly, the threshold voltage of H 2 O 2 -treated ZnO nanowire FETs shifted to the positive gate bias direction, leading a transition of the operation mode from depletion-mode to enhancement-mode. This H 2 O 2 solution treatment can be a useful method for controlling the operation mode of ZnO nanowire FETs with a wide threshold voltage shift in a few second solution treatment.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.035001
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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