In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 9S ( 1997-09-01), p. 5829-
Abstract:
Degradation of ferroelectric properties with decreasing film thickness is a common
problem of PbTiO 3 type ferroelectric thin films. We suspected that this degradation was caused
mainly by oxygen vacancies that diffused from the film surface through the grain boundaries during firing. Thus we have attempted to substitute Al 3+ for Ti 4+ in PbTiO 3 using a sol-gel
method. In this study, the effect of the film thickness on the ferroelectric properties of Pb(Ti 0.9 Al 0.1 )O 3- x thin films ranging from thickness of 637 to 169 nm was investigated, and the
dielectric constant and leakage current were compared to those of PbTiO 3 . The ferroelectric
properties of Pb(Ti 0.9 Al 0.1 )O 3- x thin films did not change much when the film thickness was
decreased, and good ferroelectric properties were maintained. The values of ε r and tan
δ for a 169-nm-thick Pb(Ti 0.9 Al 0.1 )O 3- x film were 365 and 0.0127, and the values of P r and E c were 15 µ C/cm 2 and 86 kV/cm, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.5829
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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