In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 10A ( 1998-10-01), p. L1138-
Abstract:
One-hundred-nanometre-long channel field effect transistors
using CdF 2 /CaF 2 heterostructures on a Si substrate
were fabricated by molecular beam epitaxy growth and electron beam lithography.
In these transistors, the gate was a highly doped Si substrate, the gate insulator was a 5-nm-thick layer of CaF 2 ,
the channel was a 5-nm-thick layer of CdF 2 ,
and the source and drain were Au/Cr. We observed effective modulation of the drain current with the
gate-source voltage at 16 K. The drain current and the transconductance were
16 nA and 28 nS, respectively. The operating voltage was high and the drain current was very
small due to the high potential barrier of the Schottky contact at the source and drain electrodes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L1138
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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