In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 8R ( 2000-08-01), p. 4757-
Abstract:
A 25-nm-long channel metal-gate PtSi Schottky source/drain metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on a separation-by-implanted-oxygen (SIMOX) substrate was demonstrated. The drain current and transconductance were 293 µA/µm and 431 mS/mm, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.4757
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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