In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 11 ( 2022-11-01), p. 115010-
Abstract:
We report the trap-assisted tunneling current and quantum efficiency (QE) loss in short wavelength infrared In 0.22 Ga 0.78 As 0.2 Sb 0.8 photo detectors. Combining experiment data with a current–voltage model, we found that the trap-assisted tunneling current was boosted by increasing Beryllium (Be) doping in active region at room temperature. However higher Be doping level imposes no negative impacts on QE. Four traps with energy levels located at 49 meV , 60 meV , 155 meV and 199 meV below conduction band minimum in a In 0.22 Ga 0.78 As 0.2 Sb 0.8 alloy are extracted from the fitting of I – V curves. Transparency measurement of an un-intentional doped In 0.22 Ga 0.78 As 0.2 Sb 0.8 sample yields an absorption coefficient of 5191 cm −1 at 2.25 μ m . Combining with the measured value of absorption coefficient, the QE dependence on diode length of In 0.22 Ga 0.78 As 0.2 Sb 0.8 photo detectors is presented. Finally, by fitting quantum efficiencies of In 0.22 Ga 0.78 As 0.2 Sb 0.8 photo detectors, we obtained that the minority electrons diffusion length is larger than 4 μ m and the minority holes diffusion length is 0.2 μ m . QE loss occurs at top N region of In 0.22 Ga 0.78 As 0.2 Sb 0.8 photo detectors due to a short holes diffusion length.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac9699
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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