In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 17 ( 2012), p. 177202-
Abstract:
The influence of gate voltage on electron transport in the graphene field-effect transistor under strong laser field is studied by using the finite-difference time-domain method. The perfect tunneling in graphene can be strongly suppressed by the strong laser field induced optical stark effect. This suppression depends not only on the laser field but also on the width and the height of the gate voltage. The electron transport through a non-square barrier is investigated. We find that a barrier with a small incline has little effect on the electron transport, but if the barrier has a large incline, the tunneling probability changes remarkably.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.61.177202
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2012
Bookmarklink