In:
Advanced Electronic Materials, Wiley, Vol. 3, No. 10 ( 2017-10)
Abstract:
Phenyl‐substituted heteroacene, diphenyl‐dibenzothiopheno[6,5‐ b :6′,5′‐ f ]thieno[3,2‐ b ]thiophene (DPh‐DBTTT), is introduced as a thermally durable high‐performance organic semiconductor. The DPh‐DBTTT single crystals exhibit hole mobility up to 31.9 cm 2 V −1 s −1 , and the vacuum‐deposited DPh‐DBTTT thin‐film transistors show a maximum mobility of 6.32 cm 2 V −1 s −1 . X‐ray crystallographic analysis reveals that the small tilting angle between the phenyl substituent and the DBTTT core reduces the reorganization energy dramatically. The structure–property relationships are thoroughly investigated using atomic force microscopy, transmission electron microscopy, and grazing incidence X‐ray diffraction analyses, in addition to charge‐transport studies. The vacuum‐deposited DPh‐DBTTT thin‐film transistors show superior thermal durability compared to the core DBTTT, which is highly valuable for device processability.
Type of Medium:
Online Resource
ISSN:
2199-160X
,
2199-160X
DOI:
10.1002/aelm.201700142
Language:
English
Publisher:
Wiley
Publication Date:
2017
detail.hit.zdb_id:
2810904-1
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