In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 11A ( 1996-11-01), p. L1419-
Abstract:
The occurrence of crystal domain inversion on a (001) GaAs substrate was confirmed by a direct observation method based on asymmetric wet etching of AlGaAs and an optical method based on second-harmonic generation. Direct evidence of crystalline inversion was exhibited in samples with a periodic structure prepared by wafer bonding, selective removal of the bonded GaAs, and metal-organic vapor phase epitaxial regrowth on the patterned template.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1419
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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