In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4S ( 1995-04-01), p. 2137-
Abstract:
Surface structure of plasma-polymerized fluorocarbon thin film on Si and gas desorption were concurrently studied as a function of temperature between 20 and 700° C using temperature-programmed X-ray photoelectron spectroscopy with a residual gas analyzer. The films, consisting of CF 3 , CF 2 , CF and C-CF x bonds, with the F/C ratio of 1.7 were found to be stable up to 200° C and to thermally decompose above 200° C. SiF 4 desorption, following gradual pyrolysis with decrease in CF 3 , CF 2 and CF bonds due to desorption of fluorocarbon gases, was observed for F/C ratios ranging from 1 to 0.1. The pyrolytic process of the film and the thermal reaction with Si substrates were further discussed based on results of additional desorption and ion-induced reaction experiments.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.2137
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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