In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 8R ( 1998-08-01), p. 4527-
Abstract:
Lattice strain in AgGaS 2 epitaxial layers of different thicknesses,
which are grown on GaAs (100) by the multisource evaporation method, is described.
Biaxial compressive mismatch strain in thin layers relaxes with increasing layer thickness, and biaxial tensile thermal strain becomes dominant in
thick layers. The thin AgGaS 2 epitaxial layers are completely
oriented toward the c -axis, but the thick layers contain
180°-rotated { 112 } twin crystals. The generation of twin crystals is considered to cause partial relaxation of
the thermal strain. The observed variation in the A 1 -mode frequency
with thickness is fully explained by considering the layer thickness dependence of the lattice strain.
Full width at half-maximum of the A 1 -mode Raman scattering line is
affected by the spatial inhomogeneity of the strain magnitude in the depth direction.
Raman scattering measurement of the A 1 mode can be used as a
sensitive technique to evaluate the lattice strain in AgGaS 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.4527
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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