In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 3 ( 2016-03-01), p. 032102-
Abstract:
We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 °C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8 × 10 −6 Ω·cm 2 ) than the AuBe/Au contacts (1.0 × 10 −4 Ω·cm 2 ). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 °C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binding energies, while this level shifted towards lower binding energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.032102
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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