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1

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Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In 0.25 Ga 0.75 As/GaAs Pseudomorphic Heterostructures

Shieh, Hir-Ming ; Wu, Chang-Luen ; Hsu, Wei-Chou ; [weitere]

IOP Publishing ; 1994

In: Japanese Journal of Applied Physics Vol. 33, No. 4R ( 1994-04-01), p. 1778-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4R ( 1994-04-01), p. 1778-

Kurzfassung: Selectively multiple δ- doped GaAs/In 0.25 Ga 0.75 As/GaAs pseudomorphic heterostructures grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for improving two-dimensional electron gas (2DEG) concentrations and mobilities were demonstrated. All the multiple δ- doped structures revealed significantly higher 2DEG concentration and mobility than those of single δ- doped and conventional homogeneously doped GaAs/InGaAs structures. The structure with double δ- doped GaAs layers grown symmetrically on both sides of the channel showed extremely high 2DEG concentrations of 6.2(4.1)×10 12 cm -2 and mobilities of 4630(19100) cm 2 / v· s at 300(77) K. Meanwhile, a peak extrinsic transconductance of 390 mS/mm, maximum effective saturation current density of 880 mA/mm, with broad and high transconductance region at 300 K, were achieved in this symmetrically δ- doped GaAs structure.

Materialart: Online-Ressource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.33.1778

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Sprache: Unbekannt

Verlag: IOP Publishing

Publikationsdatum: 1994

ZDB Id: 218223-3

ZDB Id: 797294-5

ZDB Id: 2006801-3

ZDB Id: 797295-7

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2

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Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

Banerjee, Writam ; Maikap, Siddheswar ; Lai, Chao-Sung ; [weitere]

Springer Science and Business Media LLC ; 2012

In: Nanoscale Research Letters Vol. 7, No. 1 ( 2012-12)

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In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2012-12)

Kurzfassung: Improved resistive switching memory characteristics by controlling the formation polarity in an IrO x /Al 2 O 3 /IrO x -ND/Al 2 O 3 /WO x /W structure have been investigated. High density of 1 × 10 13 /cm 2 and small size of 1.3 nm in diameter of the IrO x nano-dots (NDs) have been observed by high-resolution transmission electron microscopy. The IrO x -NDs, Al 2 O 3 , and WO x layers are confirmed by X-ray photo-electron spectroscopy. Capacitance-voltage hysteresis characteristics show higher charge-trapping density in the IrO x -ND memory as compared to the pure Al 2 O 3 devices. This suggests that the IrO x -ND device has more defect sites than that of the pure Al 2 O 3 devices. Stable resistive switching characteristics under positive formation polarity on the IrO x electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al 2 O 3 /IrO x top electrode interface. The switching mechanism is explained schematically based on our resistive switching parameters. The resistive switching random access memory (ReRAM) devices under positive formation polarity have an applicable resistance ratio of 〉 10 after extrapolation of 10 years data retention at 85°C and a long read endurance of 10 5 cycles. A large memory size of 〉 60 Tbit/sq in. can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future.

Materialart: Online-Ressource

ISSN: 1556-276X

URL: Article

DOI: 10.1186/1556-276X-7-194

Sprache: Englisch

Verlag: Springer Science and Business Media LLC

Publikationsdatum: 2012

ZDB Id: 2253244-4

ZDB Id: 3149496-1

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3

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Effects of Slurry in Cu Chemical Mechanical Polishing (CMP) of TSVs for 3-D IC Integration

Chen, Jui-Chin ; Lau, John H. ; Tzeng, Pei-Jer ; [weitere]

Institute of Electrical and Electronics Engineers (IEEE) ; 2012

In: IEEE Transactions on Components, Packaging and Manufacturing Technology Vol. 2, No. 6 ( 2012-06), p. 956-963

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In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers (IEEE), Vol. 2, No. 6 ( 2012-06), p. 956-963

Materialart: Online-Ressource

ISSN: 2156-3950 , 2156-3985

URL: Article

DOI: 10.1109/TCPMT.2011.2177663

Sprache: Unbekannt

Verlag: Institute of Electrical and Electronics Engineers (IEEE)

Publikationsdatum: 2012

ZDB Id: 2595289-4

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4

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Impact of incomplete set programing on the performance of phase change memory cell

Chao, Der-Sheng ; Lien, Chenhsin ; Lee, Chain-Ming ; [weitere]

AIP Publishing ; 2008

In: Applied Physics Letters Vol. 92, No. 6 ( 2008-02-11)

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In: Applied Physics Letters, AIP Publishing, Vol. 92, No. 6 ( 2008-02-11)

Kurzfassung: Phase change memory (PCM) cells with T-shaped structure using tungsten heater were fabricated and the cell characteristics concerning the programing pulse width were also investigated in this work. The numerical modeling shows the thermal nonuniformity over the active region due to the considerable thermal sink of tungsten heater results in the amorphous-phase residues and the incomplete set programing. The experimental results reveal the existence of residual amorphous phase and indicate that the incomplete set programing is the dominant factor to degrade the PCM cell performances, such as the sensing margin and the endurance. The strategies to eliminate the incomplete set programing are the optimization in programing pulse width and the replacement of the tungsten heater with higher resistivity metal such as TiAlN.

Materialart: Online-Ressource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.2839379

RVK:

UA 1000

Sprache: Englisch

Verlag: AIP Publishing

Publikationsdatum: 2008

ZDB Id: 211245-0

ZDB Id: 1469436-0

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5

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Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure

Chao, Der-Sheng ; Chen, Yi-Chan ; Chen, Fred ; [weitere]

Institute of Electrical and Electronics Engineers (IEEE) ; 2007

In: IEEE Electron Device Letters Vol. 28, No. 10 ( 2007-10), p. 871-873

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In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 28, No. 10 ( 2007-10), p. 871-873

Materialart: Online-Ressource

ISSN: 0741-3106

URL: Article

DOI: 10.1109/LED.2007.906084

RVK:

ZG 1100

Sprache: Unbekannt

Verlag: Institute of Electrical and Electronics Engineers (IEEE)

Publikationsdatum: 2007

ZDB Id: 245158-X

ZDB Id: 2034325-5

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6

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Oxide Liner, Barrier and Seed Layers, and Cu-Plating of Blind Through Silicon Vias (TSVs) on 300mm Wafers for 3D IC Integration

Wu, Chien-Ying ; Chen, Shang-Chun ; Tzeng, Pei-Jer ; [weitere]

IMAPS - International Microelectronics Assembly and Packaging Society ; 2011

In: International Symposium on Microelectronics Vol. 2011, No. 1 ( 2011-01-01), p. 000001-000007

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In: International Symposium on Microelectronics, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 2011, No. 1 ( 2011-01-01), p. 000001-000007

Kurzfassung: In this study, key enabling technologies such as the oxide liner by the PECVD, the barrier and seed layers by the PVD, and Cu-plating of blind TSVs on 300mm wafers for 3D integration are investigated. Emphases are placed on the determination and optimization of the important parameters for each of the key enabling technologies. Also, leakage currents of the fabricated Cu-filled TSVs are measured. Furthermore cross sections and SEM of the fabricated TSVs are provided and examined.

Materialart: Online-Ressource

ISSN: 2380-4505

URL: Article

DOI: 10.4071/isom-2011-TA1-Paper1

Sprache: Englisch

Verlag: IMAPS - International Microelectronics Assembly and Packaging Society

Publikationsdatum: 2011

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7

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Formation of Through-Glass-Via (TGV) by Photo-Chemical Etching with High Selectivity

Pei, Zingway ; Sun, Jui-Po ; Lai, Hsin-Chen ; [weitere]

IMAPS - International Microelectronics Assembly and Packaging Society ; 2012

In: International Symposium on Microelectronics Vol. 2012, No. 1 ( 2012-01-01), p. 000785-000792

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In: International Symposium on Microelectronics, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 2012, No. 1 ( 2012-01-01), p. 000785-000792

Kurzfassung: In this work, we utilize a photo-chemical etching (PCE) method to form through-glass-via (TGV). The PCE is a low cost, damage-free and potentially large-area method for TGV formation. An ultra-violet (355 nm) pulse laser was used to illuminate the glass surface. The illuminated region will crystallize after thermal annealing in a furnace. The crystallized glass shows much faster etching rate than the amorphous region in HF solution. For a relatively thick (600 nm) glass, a via-hole with diameter of around 60 μm was demonstrated in laser energy of 11 J/cm2. No laser damages were observed. In comparison, at least 10 times higher energy was required to drill a glass directly. Micro-cracks were form around the glass-via. In addition, a 40 selectivity was achieved to the crystallized and amorphous region. This simple and useful method paves a straight road for 3-D integration.

Materialart: Online-Ressource

ISSN: 2380-4505

URL: Article

DOI: 10.4071/isom-2012-WP15

Sprache: Englisch

Verlag: IMAPS - International Microelectronics Assembly and Packaging Society

Publikationsdatum: 2012

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8

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Oxide Liner, Barrier and Seed Layers, and Cu Plating of Blind Through Silicon Vias (TSVs) on 300 mm Wafers for 3D IC Integration

Wu, Chien-Ying ; Chen, Shang-Chun ; Tzeng, Pei-Jer ; [weitere]

IMAPS - International Microelectronics Assembly and Packaging Society ; 2012

In: Journal of Microelectronics and Electronic Packaging Vol. 9, No. 1 ( 2012-01-01), p. 31-36

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In: Journal of Microelectronics and Electronic Packaging, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 9, No. 1 ( 2012-01-01), p. 31-36

Kurzfassung: In this study, key enabling technologies such as the oxide liner by the PECVD, the barrier and seed layers by the PVD, and Cu plating of blind TSVs on 300 mm wafers for 3D integration are investigated. Emphasis is placed on the determination and optimization of the important parameters for each of the key enabling technologies. Also, the leakage current of the fabricated Cu-filled TSVs is measured. Furthermore, cross sections and SEM of the fabricated TSVs are examined.

Materialart: Online-Ressource

ISSN: 1551-4897

URL: Article

DOI: 10.4071/imaps.308

Sprache: Englisch

Verlag: IMAPS - International Microelectronics Assembly and Packaging Society

Publikationsdatum: 2012

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9

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Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Syu, Yong-En ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; [weitere]

Institute of Electrical and Electronics Engineers (IEEE) ; 2011

In: IEEE Electron Device Letters Vol. 32, No. 4 ( 2011-04), p. 545-547

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In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 32, No. 4 ( 2011-04), p. 545-547

Materialart: Online-Ressource

ISSN: 0741-3106 , 1558-0563

URL: Article

DOI: 10.1109/LED.2011.2104936

RVK:

ZG 1100

Sprache: Unbekannt

Verlag: Institute of Electrical and Electronics Engineers (IEEE)

Publikationsdatum: 2011

ZDB Id: 245158-X

ZDB Id: 2034325-5

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10

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Improved Selectively δ-Doped GaAs/InGaAs Double-Quantum-Well Pseudomorphic HFET's Utilizing a Buried P-Layer on the Buffer

Kao, Ming-Jer ; Wei-Chou Hsu, Wei-Chou Hsu ; Hir-Ming Shieh, Hir-Ming Shieh

IOP Publishing ; 1993

In: Japanese Journal of Applied Physics Vol. 32, No. 10B ( 1993-10-01), p. L1503-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10B ( 1993-10-01), p. L1503-

Kurzfassung: This letter demonstrates a new double-quantum-well (DQW) selectively δ-doped GaAs/InGaAs HFET's utilizing a buried lightly doped p-layer on the GaAs buffer prepared by low-pressure metalorganic chemical vapor deposition (MOCVD). Pinch-off characteristic and transconductance are remarkably improved in the DQW HFET's by using a buried p-layer. The extrinsic transconductances of the DQW HFET's with and without the buried p-layer are 240 mS/mm and 190 mS/mm, respectively.

Materialart: Online-Ressource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.32.L1503

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Sprache: Unbekannt

Verlag: IOP Publishing

Publikationsdatum: 1993

ZDB Id: 218223-3

ZDB Id: 797294-5

ZDB Id: 2006801-3

ZDB Id: 797295-7

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