KOBV Portal

1

Online Resource

Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In 0.25 Ga 0.75 As/GaAs Pseudomorphic Heterostructures

Shieh, Hir-Ming ; Wu, Chang-Luen ; Hsu, Wei-Chou ; [et al.]

IOP Publishing ; 1994

In: Japanese Journal of Applied Physics Vol. 33, No. 4R ( 1994-04-01), p. 1778-

add to watchlist on the watchlist

Details

In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4R ( 1994-04-01), p. 1778-

Abstract: Selectively multiple δ- doped GaAs/In 0.25 Ga 0.75 As/GaAs pseudomorphic heterostructures grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for improving two-dimensional electron gas (2DEG) concentrations and mobilities were demonstrated. All the multiple δ- doped structures revealed significantly higher 2DEG concentration and mobility than those of single δ- doped and conventional homogeneously doped GaAs/InGaAs structures. The structure with double δ- doped GaAs layers grown symmetrically on both sides of the channel showed extremely high 2DEG concentrations of 6.2(4.1)×10 12 cm -2 and mobilities of 4630(19100) cm 2 / v· s at 300(77) K. Meanwhile, a peak extrinsic transconductance of 390 mS/mm, maximum effective saturation current density of 880 mA/mm, with broad and high transconductance region at 300 K, were achieved in this symmetrically δ- doped GaAs structure.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.33.1778

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1994

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

2

Online Resource

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

Banerjee, Writam ; Maikap, Siddheswar ; Lai, Chao-Sung ; [et al.]

Springer Science and Business Media LLC ; 2012

In: Nanoscale Research Letters Vol. 7, No. 1 ( 2012-12)

add to watchlist on the watchlist

Details

In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2012-12)

Abstract: Improved resistive switching memory characteristics by controlling the formation polarity in an IrO x /Al 2 O 3 /IrO x -ND/Al 2 O 3 /WO x /W structure have been investigated. High density of 1 × 10 13 /cm 2 and small size of 1.3 nm in diameter of the IrO x nano-dots (NDs) have been observed by high-resolution transmission electron microscopy. The IrO x -NDs, Al 2 O 3 , and WO x layers are confirmed by X-ray photo-electron spectroscopy. Capacitance-voltage hysteresis characteristics show higher charge-trapping density in the IrO x -ND memory as compared to the pure Al 2 O 3 devices. This suggests that the IrO x -ND device has more defect sites than that of the pure Al 2 O 3 devices. Stable resistive switching characteristics under positive formation polarity on the IrO x electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al 2 O 3 /IrO x top electrode interface. The switching mechanism is explained schematically based on our resistive switching parameters. The resistive switching random access memory (ReRAM) devices under positive formation polarity have an applicable resistance ratio of 〉 10 after extrapolation of 10 years data retention at 85°C and a long read endurance of 10 5 cycles. A large memory size of 〉 60 Tbit/sq in. can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future.

Type of Medium: Online Resource

ISSN: 1556-276X

URL: Article

DOI: 10.1186/1556-276X-7-194

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2012

detail.hit.zdb_id: 2253244-4

detail.hit.zdb_id: 3149496-1

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

Wissenschaftspark Albert Einstein

EUV Frankfurt

TH Wildau

FH Potsdam

3

Online Resource

Impact of incomplete set programing on the performance of phase change memory cell

Chao, Der-Sheng ; Lien, Chenhsin ; Lee, Chain-Ming ; [et al.]

AIP Publishing ; 2008

In: Applied Physics Letters Vol. 92, No. 6 ( 2008-02-11)

add to watchlist on the watchlist

Details

In: Applied Physics Letters, AIP Publishing, Vol. 92, No. 6 ( 2008-02-11)

Abstract: Phase change memory (PCM) cells with T-shaped structure using tungsten heater were fabricated and the cell characteristics concerning the programing pulse width were also investigated in this work. The numerical modeling shows the thermal nonuniformity over the active region due to the considerable thermal sink of tungsten heater results in the amorphous-phase residues and the incomplete set programing. The experimental results reveal the existence of residual amorphous phase and indicate that the incomplete set programing is the dominant factor to degrade the PCM cell performances, such as the sensing margin and the endurance. The strategies to eliminate the incomplete set programing are the optimization in programing pulse width and the replacement of the tungsten heater with higher resistivity metal such as TiAlN.

Type of Medium: Online Resource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.2839379

RVK:

UA 1000

Language: English

Publisher: AIP Publishing

Publication Date: 2008

detail.hit.zdb_id: 211245-0

detail.hit.zdb_id: 1469436-0

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

Wissenschaftspark Albert Einstein

TH Wildau

4

Online Resource

Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure

Chao, Der-Sheng ; Chen, Yi-Chan ; Chen, Fred ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2007

In: IEEE Electron Device Letters Vol. 28, No. 10 ( 2007-10), p. 871-873

add to watchlist on the watchlist

Details

In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 28, No. 10 ( 2007-10), p. 871-873

Type of Medium: Online Resource

ISSN: 0741-3106

URL: Article

DOI: 10.1109/LED.2007.906084

RVK:

ZG 1100

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2007

detail.hit.zdb_id: 245158-X

detail.hit.zdb_id: 2034325-5

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

Wissenschaftspark Albert Einstein

TH Wildau

5

Online Resource

Oxide Liner, Barrier and Seed Layers, and Cu-Plating of Blind Through Silicon Vias (TSVs) on 300mm Wafers for 3D IC Integration

Wu, Chien-Ying ; Chen, Shang-Chun ; Tzeng, Pei-Jer ; [et al.]

IMAPS - International Microelectronics Assembly and Packaging Society ; 2011

In: International Symposium on Microelectronics Vol. 2011, No. 1 ( 2011-01-01), p. 000001-000007

add to watchlist on the watchlist

Details

In: International Symposium on Microelectronics, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 2011, No. 1 ( 2011-01-01), p. 000001-000007

Abstract: In this study, key enabling technologies such as the oxide liner by the PECVD, the barrier and seed layers by the PVD, and Cu-plating of blind TSVs on 300mm wafers for 3D integration are investigated. Emphases are placed on the determination and optimization of the important parameters for each of the key enabling technologies. Also, leakage currents of the fabricated Cu-filled TSVs are measured. Furthermore cross sections and SEM of the fabricated TSVs are provided and examined.

Type of Medium: Online Resource

ISSN: 2380-4505

URL: Article

DOI: 10.4071/isom-2011-TA1-Paper1

Language: English

Publisher: IMAPS - International Microelectronics Assembly and Packaging Society

Publication Date: 2011

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

6

Online Resource

Effects of Slurry in Cu Chemical Mechanical Polishing (CMP) of TSVs for 3-D IC Integration

Chen, Jui-Chin ; Lau, John H. ; Tzeng, Pei-Jer ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2012

In: IEEE Transactions on Components, Packaging and Manufacturing Technology Vol. 2, No. 6 ( 2012-06), p. 956-963

add to watchlist on the watchlist

Details

In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers (IEEE), Vol. 2, No. 6 ( 2012-06), p. 956-963

Type of Medium: Online Resource

ISSN: 2156-3950 , 2156-3985

URL: Article

DOI: 10.1109/TCPMT.2011.2177663

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2012

detail.hit.zdb_id: 2595289-4

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

Wissenschaftspark Albert Einstein

TH Wildau

7

Online Resource

Formation of Through-Glass-Via (TGV) by Photo-Chemical Etching with High Selectivity

Pei, Zingway ; Sun, Jui-Po ; Lai, Hsin-Chen ; [et al.]

IMAPS - International Microelectronics Assembly and Packaging Society ; 2012

In: International Symposium on Microelectronics Vol. 2012, No. 1 ( 2012-01-01), p. 000785-000792

add to watchlist on the watchlist

Details

In: International Symposium on Microelectronics, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 2012, No. 1 ( 2012-01-01), p. 000785-000792

Abstract: In this work, we utilize a photo-chemical etching (PCE) method to form through-glass-via (TGV). The PCE is a low cost, damage-free and potentially large-area method for TGV formation. An ultra-violet (355 nm) pulse laser was used to illuminate the glass surface. The illuminated region will crystallize after thermal annealing in a furnace. The crystallized glass shows much faster etching rate than the amorphous region in HF solution. For a relatively thick (600 nm) glass, a via-hole with diameter of around 60 μm was demonstrated in laser energy of 11 J/cm2. No laser damages were observed. In comparison, at least 10 times higher energy was required to drill a glass directly. Micro-cracks were form around the glass-via. In addition, a 40 selectivity was achieved to the crystallized and amorphous region. This simple and useful method paves a straight road for 3-D integration.

Type of Medium: Online Resource

ISSN: 2380-4505

URL: Article

DOI: 10.4071/isom-2012-WP15

Language: English

Publisher: IMAPS - International Microelectronics Assembly and Packaging Society

Publication Date: 2012

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

8

Online Resource

Oxide Liner, Barrier and Seed Layers, and Cu Plating of Blind Through Silicon Vias (TSVs) on 300 mm Wafers for 3D IC Integration

Wu, Chien-Ying ; Chen, Shang-Chun ; Tzeng, Pei-Jer ; [et al.]

IMAPS - International Microelectronics Assembly and Packaging Society ; 2012

In: Journal of Microelectronics and Electronic Packaging Vol. 9, No. 1 ( 2012-01-01), p. 31-36

add to watchlist on the watchlist

Details

In: Journal of Microelectronics and Electronic Packaging, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 9, No. 1 ( 2012-01-01), p. 31-36

Abstract: In this study, key enabling technologies such as the oxide liner by the PECVD, the barrier and seed layers by the PVD, and Cu plating of blind TSVs on 300 mm wafers for 3D integration are investigated. Emphasis is placed on the determination and optimization of the important parameters for each of the key enabling technologies. Also, the leakage current of the fabricated Cu-filled TSVs is measured. Furthermore, cross sections and SEM of the fabricated TSVs are examined.

Type of Medium: Online Resource

ISSN: 1551-4897

URL: Article

DOI: 10.4071/imaps.308

Language: English

Publisher: IMAPS - International Microelectronics Assembly and Packaging Society

Publication Date: 2012

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

9

Online Resource

Biologic Agents Reduce Cardiovascular Events in Rheumatoid Arthritis Not Responsive to Tumour Necrosis Factor Inhibitors: A National Cohort Study

Hsieh, Ming-Jer ; Lee, Cheng-Hung ; Tsai, Ming-Lung ; [et al.]

Elsevier BV ; 2020

In: Canadian Journal of Cardiology Vol. 36, No. 11 ( 2020-11), p. 1739-1746

add to watchlist on the watchlist

Details

In: Canadian Journal of Cardiology, Elsevier BV, Vol. 36, No. 11 ( 2020-11), p. 1739-1746

Type of Medium: Online Resource

ISSN: 0828-282X

URL: Article

DOI: 10.1016/j.cjca.2020.01.003

Language: English

Publisher: Elsevier BV

Publication Date: 2020

detail.hit.zdb_id: 2048214-0

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

10

Online Resource

Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions

Wu, Kuo-Ming ; Huang, Chao-Hsien ; Wang, Yung-Hung ; [et al.]

AIP Publishing ; 2007

In: Journal of Applied Physics Vol. 101, No. 9 ( 2007-05-01)

add to watchlist on the watchlist

Details

In: Journal of Applied Physics, AIP Publishing, Vol. 101, No. 9 ( 2007-05-01)

Abstract: The brief thermal treatment effects on the magnetoresistance of microstructured Co60Fe20B20-based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 4∕2μm was patterned out of film stack of seed layer (20)∕PtMn(15)∕Co60Fe20B20(3)∕Al(0.7)oxide∕C60Fe20B20(20)∕capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100to400°C for only 5min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250°C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35%, similar to that of as-fabricated devices, sustains up to annealing temperature of 350°C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.

Type of Medium: Online Resource

ISSN: 0021-8979 , 1089-7550

URL: Article

DOI: 10.1063/1.2712317

Language: English

Publisher: AIP Publishing

Publication Date: 2007

detail.hit.zdb_id: 220641-9

detail.hit.zdb_id: 3112-4

detail.hit.zdb_id: 1476463-5

Bookmarklink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Online Resource

Open Access Request

Availability (electronic / print)

BTU Cottbus

Wissenschaftspark Albert Einstein

TH Wildau

Kooperativer Bibliotheksverbund

Berlin Brandenburg