In:
ECS Transactions, The Electrochemical Society, Vol. 1, No. 5 ( 2006-07-07), p. 693-703
Abstract:
We present an efficient simulation method for lifetime based tunneling in CMOS devices through layers of high-κ dielectrics, which relies on the precise determination of quasi-bound states (QBS). The QBS are calculated with the perfectly matched layer (PML) method. Introducing a complex coordinate stretching allows artifical absorbing layers to be applied at the boundaries. The QBS appear as the eigenvalues of a linear, non-Hermitian Hamiltonian where the QBS lifetimes are directly related to the imaginary part of the eigenvalues. The PML method turns out to be a numerically stable and efficient method to calculate QBS lifetimes for the investigation of direct tunneling through stacked gate dielectrics.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006
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