In:
Macromolecular Rapid Communications, Wiley, Vol. 35, No. 20 ( 2014-10), p. 1770-1775
Abstract:
The performance of polymer field‐effect transistors (PFETs) based on short rigid rod semiconducting poly(2,5‐didodecyloxy‐ p ‐phenyleneethynylene) (D‐OPPE) is highlighted. The controlled heating and cooling of thin films of D‐OPPE allows for a recrystallization from the melt, boosting the performance of D‐OPPE‐based transistors. The improved film properties induced by controlled annealing lead to a hole field‐effect mobility around 0.014 cm 2 V −1 s −1 , an on/off ratio of 10 6 , a sub‐threshold swing of 3 V dec −1 and a threshold voltage of −35 V, employing a poly(methyl methacrylate) (PMMA) gate dielectric. Thus, PFETs out of D‐OPPE compete now with spin‐coated, polycrystalline poly(3‐hexylthiophene)‐based PFETs. image
Type of Medium:
Online Resource
ISSN:
1022-1336
,
1521-3927
DOI:
10.1002/marc.201400203
Language:
English
Publisher:
Wiley
Publication Date:
2014
detail.hit.zdb_id:
1475027-2
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