In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 5R ( 1997-05-01), p. 2640-
Abstract:
This paper describes the fabrication of 0.2 µ m hole resist patterns in KrF excimer laser lithography. By using a SiN x single-layer halftone phase-shifting mask (PSM) and an in-house chemically amplified positive resist, 0.2 µ m hole resist patterns can be obtained with sufficient depth of focus (DOF). Furthermore, a 0.15 µ m hole resist pattern can also be fabricated by using the PSM.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2640
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink