In:
Advanced Optical Materials, Wiley, Vol. 7, No. 18 ( 2019-09)
Abstract:
New generation of hybrid photodetectors may provide the optimal solution for compact, highly sensitive, durable, and reliable broadband ultraviolet (BUV) sensors. A high‐performance dual‐mode BUV photodetector based on melding of highly resistive GaN and reduced graphene oxide is reported. Under zero bias, the device exhibits a sub‐picoampere dark current, high light‐to‐dark current ( I Light / I Dark ) ratio of ≈3.8 × 10 3 and high BUV–visible rejection ratio (≈1.8 × 10 2 ) with fast rise and fall times. The photodetector displays remarkable stability when subject to extreme operating conditions. The photoresponse of the detector shows a dark current of ≈2.41 nA at ± 200 V bias, I Light / I Dark ratio of ≈200 and high BUV–vis rejection ratio (≈7 × 10 2 ). The response time of device is typically in the range of 15–27 ms measured at 12 Hz light chopping frequency. When subjected to high working temperature of up to 116 °C, it shows a stable optical switching response. In addition, the device displays impressive long‐term stability with no change in photoresponse even after a period of 28 months. This unique combination of low dark current, dual‐mode operation, and no aging effects upon prolonged exposure to high‐operating voltage, high‐temperature, and BUV radiation is attractive for a variety of harsh environment applications.
Type of Medium:
Online Resource
ISSN:
2195-1071
,
2195-1071
DOI:
10.1002/adom.201900340
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2708158-8
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