In:
Journal of Applied Physics, AIP Publishing, Vol. 47, No. 3 ( 1976-03-01), p. 1095-1102
Abstract:
Phototransport measurements on chlorine-doped Cd1−xZnxTe crystals with 0⩽x⩽0.35 show a persistent impurity photoconductivity below 140 °K. The thermal activation energy of the defect center responsible for both the dark carriers and photocarriers increases from −0.045 eV for x=0 to +0.27 eV for x=0.25 (negative implies above the conduction-band edge), resulting in a decrease of the dark free-carrier density with increasing Zn content. This permits an increasing light-to-dark-conductivity ratio with increasing Zn content, reaching 2.5×105 for x=0.25. The increase of the mobility under photoexcitation indicates the center to be a double acceptor. Thermal emission rate, photoconductivity decay, and optical cross-section measurements are also reported.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1976
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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