In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 7B ( 1996-07-01), p. L887-
Abstract:
1 µ m-long amorphous-silicon thin-film transistors with a distributed-threshold-voltage (DTV) structure have been evaluated in detail, for the first time, and found to have sufficiently low cut-off characteristics, simultaneously with good turn-on characteristics. The dynamic range, that is, the on/off current ratio, was as high as 8 orders in magnitude. This favorable property is due to the partially doped channel in the DTV structure and the selectively polycrystallized Si source and drain.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L887
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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