In:
Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 11, No. 27 ( 2023), p. 9107-9113
Abstract:
We report high-quality atomic-layer-deposited SiN x thin films using a novel remote plasma source, hollow cathode plasma (HCP), at a low temperature of 300 °C. SiN x films using the HCP source show superior properties to those deposited using inductively-coupled plasma (ICP), a conventional remote plasma source. X-Ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that the SiN x film grown using the HCP source has a higher N/Si ratio, a lower oxygen impurity concentration, and outstanding oxidation resistance. The wet etch rate of HCP SiN x films is significantly improved compared with that of ICP SiN x films. In addition, the HCP SiN x films exhibit superb electrical properties, such as the dielectric constant, gate leakage current, and dielectric breakdown field.
Type of Medium:
Online Resource
ISSN:
2050-7526
,
2050-7534
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2702245-6
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