In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 8A ( 1996-08-01), p. L999-
Abstract:
Gallium fluoride films were directly grown on gallium arsenide (GaAs) at temperatures below 300°Cusinga radio frequency (RF) remote SF 6 plasma.The growth kinetics are exhibited a rapid initial increase for 60 minutes, withno significant increase thereafter. Rutherford backscattering spectrometry (RBS) and secondaryion mass spectrometry (SIMS) showed that the GaF 3 films had almost stoichiometric composition. Theas-grown films exhibit a current density of lessthan 1 µA/cm 2 at a breakdown field of 1 MV/cm and a refractive index of 2.0–2.3 at a wavelength of 632.8 nm. A typical value of the dielectric constant is about 5.5 as derived from 1 MHz capacitance-voltage ( C-V ) measurements. The minimum interface state density is estimated to be around 1 × 10 12 cm -2 ·eV.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L999
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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