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  • 1
    Online Resource
    Online Resource
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 3S ( 1997-03-01), p. 1394-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1394-
    Abstract: The grain-boundary trap properties in polysilicon thin film transistors (poly-Si TFTs) are evaluated using the three-level charge-pumping (3CP) technique. By measuring the 3CP current with various fall times, we can obtain the grain-boundary trap distribution for each time constant window. The 3CP current versus step voltage characteristics indicate that the total change of 3CP currents drastically increase as the fall time decreases and as the step time increases. The large change of 3CP current indicates that a large number of grain-boundary traps ( D gb ≥4 ×10 11 eV -1 ·cm -2 ) exist in the upper half of the band gap in the n-channel TFTs. The grain-boundary trap density is derived from the step voltage dependence of the 3CP current. The influence of process temperature on trap properties is examined using the 3CP technique.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 2S ( 1996-02-01), p. 919-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 919-
    Abstract: P-channel metal-oxide-semiconductor (PMOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si 0.82 Ge 0.18 ) films for the first time. The transistors with a channel length of 1.5 µm exhibit good electrical characteristics. The device performance is degraded in proportion to oxygen content, based on measurements using secondary ion mass spectrometry (SIMS). After electron cyclotron resonance (ECR) plasma hydrogenation under optimal conditions, the density of trap states is markedly decreased in short-channel devices, resulting in relatively low leakage current (∼12.1pA/µm) and high field-effect hole mobility (∼13.4cm 2 /V·s).
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Library Location Call Number Volume/Issue/Year Availability
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  • 3
    Online Resource
    Online Resource
    IOP Publishing ; 1998
    In:  Japanese Journal of Applied Physics Vol. 37, No. 12S ( 1998-12-01), p. 6824-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6824-
    Abstract: The possibility and usefulness of proximity correction in 100-nm-regime X-ray lithography was examined. Two-dimensional array patterns of around 100 nm linewidth were fabricated by e-beam exposure and subsequent gold electroplating. The mask patterns consist of normal rectangular patterns and shape-modified patterns which are modified by a simple optical proximity correction (OPC)-like method such as the addition of a simple serif at the end of the pattern. Different serifs sizes and pattern shapes were considered. The delineated images printed by normal rectangular mask pattern and shape-modified mask patterns were compared with a target image to be defined on the wafer, and the faithfulness of printed images was determined by measuring the lengths and widths at all the significant points on two-dimensional patterns. The OPC-like mask modification technique had positive effects in improving the fidelity of the printed image in the linewidth range below 150 nm, especially in the reduction of image shortening in array patterns. The optimum serif size depends on the pattern size, pattern density and the process conditions, especially the gap between the mask and wafer. In addition, two-dimensional aerial image simulations were performed and compared with experimental results and showed the same results as the experiments.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 4
    Online Resource
    Online Resource
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 12S ( 2000-12-01), p. 6827-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12S ( 2000-12-01), p. 6827-
    Abstract: For forward-scattering range scale features (α-scale features), the exposure contrast has too small a value to delineate the α-scale features using conventional dose modification proximity effect correction (PEC) in electron beam lithography. To delineate the α-scale features, the exposure contrast should be increased by shape modification. Therefore, we propose a dose-and-shape-modification PEC for α-scale features. The proposed PEC consists of two steps. The first step is the conventional dose modification PEC for the backscattering effect. The second step is the shape modification and dose compensation for the forward-scattering effect. A significant advantage of the proposed PEC is its low cost in terms of computation time, because shape modification and dose compensation for forward scattering are noniterative computations which do not consider the backscattering effect. Considering the exposure contrast, a separation distance larger than 2α between patterns is sufficient to delineate the α-scale features in the case of an equal lines-and-spaces (L & S) array. Experimental results are consistent with the simulation results, within a margin of error of approximately 5%. Using the proposed PEC, a 1.32α L & S array was delineated.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 5
    Online Resource
    Online Resource
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 5A ( 1996-05-01), p. L538-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 5A ( 1996-05-01), p. L538-
    Abstract: We propose a new process without source-drain doping for realization of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFT's). The process is based on TiSi 2 contacts for source and drain. Titanium disilicide was formed by in situ silicidation using high-temperature magnetron sputtering at 450° C. The new device has demonstrated better leakage characteristics (∼0.4 pA/µ m) and slightly lower ON current compared with standard-processed devices having phosphorus-doped source and drain with a dose of 1×10 14 cm -2 . The field-effect mobility (∼10 cm 2 / V·s) and I on / I off current ratio (∼1.2×10 6 ) are comparable to those of standard-processed devices.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Library Location Call Number Volume/Issue/Year Availability
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  • 6
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1389-
    Abstract: N-channel and p-channel metal-oxide-semiconductor (MOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly- Si 0.88 Ge 0.12 ) films by a low temperature (≤550° C) process. These devices employ in-situ n + doped poly- Si 0.65 Ge 0.35 films as gate electrodes to reduce the process time and temperature, dual-offset spacers to reduce the electric field in the drain junction region, and silicon capping layers to protect the poly-Si 1- x Ge x films against oxygen. The I d - V g characteristics in n-channel TFT's, as well as in p-channel TFT's, exhibit good behavior after remote-PECVD hydrogenation. Further improvements on electrical properties in n-channel TFT's are limited by trap-inducing G e behaviors in poly-Si 1- x Ge x films.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
    RVK:
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Library Location Call Number Volume/Issue/Year Availability
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  • 7
    Online Resource
    Online Resource
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 12S ( 2000-12-01), p. 6942-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12S ( 2000-12-01), p. 6942-
    Abstract: The total effective blur, σ TE , in synchrotron proximity X-ray lithography (PXRL) was evaluated to obtain a simple effective dose image. σ TE characterizes the total amount of blur attributable to the source angular distribution, the exposure system, the resist material and the process. In general, the final image on the resist becomes more blurry than the aerial image due to the absorption of photons by resists and the following additional resist process such as post exposure bake (PEB). σ TE 2 can be understood by the square sum of many kinds of blur sources, and can be decomposed into a gap-dependent factor, s eff , and a gap-independent factor, σ const . These characteristics of σ TE can be evaluated using the rate of the CD changes within a gap range. We demonstrated the procedure for evaluating σ TE , s eff and σ const , for a specific resist material and process, along with the exposure system such as a synchrotron source and a stepper.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
    RVK:
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Library Location Call Number Volume/Issue/Year Availability
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  • 8
    In: Stroke, Ovid Technologies (Wolters Kluwer Health), Vol. 54, No. 8 ( 2023-08), p. 1993-2001
    Abstract: Whether a strategy to target an LDL (low-density lipoprotein) cholesterol 〈 70 mg/dL is more effective when LDL is reduced 〉 50% from baseline rather than 〈 50% from baseline has not been investigated. METHODS: The Treat Stroke to Target trial was conducted in France and South Korea in 61 sites between March 2010 and December 2018. Patients with ischemic stroke in the previous 3 months or transient ischemic attack within the previous 15 days and evidence of cerebrovascular or coronary artery atherosclerosis were randomly assigned to a target LDL cholesterol of 〈 70 mg/dL or 100±10 mg/dL, using statin and/or ezetimibe as needed. We used the results of repeated LDL measurements (median, 5 [2–6] per patient) during 3.9 years (interquartile range, 2.1–6.8) of follow-up. The primary outcome was the composite of ischemic stroke, myocardial infarction, new symptoms requiring urgent coronary or carotid revascularization, and vascular death. Cox regression model including lipid-lowering therapy as a time-varying variable, after adjustment for randomization strategy, age, sex, index event (stroke or transient ischemic attack), and time since the index event. RESULTS: Among 2860 patients enrolled, patients in the lower target group who had 〉 50% LDL cholesterol reduction from baseline during the trial had a higher baseline LDL cholesterol and a lower LDL cholesterol achieved as compared to patients who had 〈 50% LDL cholesterol reduction (155±32 and 62 mg/dL versus 121±34 and 74 mg/dL, respectively, P 〈 0.001 for both). In the 〈 70 mg/dL target group, patients with 〉 50% LDL reduction had a significant reduction in the primary outcome as compared to the higher target group (hazard ratio, 0.61 [95% CI, 0.43–0.88]; P =0.007) and patients with 〈 50% LDL reduction from baseline had little reduction (hazard ratio, 0.96 [95% CI, 0.73–1.26]; P =0.75). CONCLUSIONS: In this post hoc analysis of the TST trial, targeting an LDL cholesterol of 〈 70 mg/dL reduced the risk of primary outcome compared with 100±10 mg/dL provided LDL cholesterol reduction from baseline was superior to 50%, thereby suggesting that the magnitude of LDL cholesterol reduction was as important to consider as the target level to achieve. REGISTRATION: URL: https://www.clinicaltrials.gov ; Unique identifier: NCT01252875. URL: https://clinicaltrialsregister.eu ; Unique identifier: EUDRACT2009-A01280-57.
    Type of Medium: Online Resource
    ISSN: 0039-2499 , 1524-4628
    RVK:
    Language: English
    Publisher: Ovid Technologies (Wolters Kluwer Health)
    Publication Date: 2023
    detail.hit.zdb_id: 1467823-8
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  • 9
    In: Stroke, Ovid Technologies (Wolters Kluwer Health), Vol. 53, No. 2 ( 2022-02), p. 457-462
    Abstract: Although statins are effective in secondary prevention of ischemic stroke, they are also associated with an increase risk of intracranial hemorrhage (ICH) in certain conditions. In the TST trial (Treat Stroke to Target), we prespecified an exploration of the predictors of incident ICH. Methods: Patients with ischemic stroke in the previous 3 months or transient ischemic attack within the previous 15 days and evidence of cerebrovascular or coronary artery atherosclerosis were randomly assigned in a 1:1 ratio to a target LDL (low-density lipoprotein) cholesterol of 〈 70 mg/dL or 100±10 mg/dL, using statin or ezetimibe. Results: Among 2860 patients enrolled, 31 incident ICH occurred over a median follow-up of 3 years (18 and 13 in the lower and higher target group, 3.21/1000 patient-years [95% CI, 2.38–4.04] and 2.32/1000 patient-years [95% CI, 1.61–3.03] , respectively). While there were no baseline predictors of ICH, uncontrolled hypertension (HR, 2.51 [95% CI, 1.01–6.31], P =0.041) and being on anticoagulant (HR, 2.36 [95% CI, 1.00–5.62], P =0.047)] during the trial were significant predictors. On-treatment low LDL cholesterol was not a predictor of ICH. Conclusions: Targeting an LDL cholesterol of 〈 70 mg/dL compared with 100±10 mg/dL in patients with atherosclerotic ischemic stroke nonsignificantly increased the risk of ICH. Incident ICHs were not associated with low LDL cholesterol. Uncontrolled hypertension and anticoagulant therapy were associated with ICH which has important clinical implications. Registration: URL: https://www.clinicaltrials.gov ; Unique identifier: NCT01252875; EUDRACT identifier: 2009-A01280-57.
    Type of Medium: Online Resource
    ISSN: 0039-2499 , 1524-4628
    RVK:
    Language: English
    Publisher: Ovid Technologies (Wolters Kluwer Health)
    Publication Date: 2022
    detail.hit.zdb_id: 1467823-8
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  • 10
    In: Stroke, Ovid Technologies (Wolters Kluwer Health), Vol. 51, No. 4 ( 2020-04), p. 1231-1239
    Abstract: The TST trial (Treat Stroke to Target) evaluated the benefit of targeting a LDL (low-density lipoprotein) cholesterol of 〈 70 mg/dL to reduce the risk of cardiovascular events in 2860 patients with ischemic stroke with atherosclerotic stenosis of cerebral vasculature or aortic arch plaque 〉 4 mm, in a French and Korean population. The follow-up lasted a median of 5.3 years in French patients (similar to the median follow-up time in the SPARCL trial [Stroke Prevention by Aggressive Reduction in Cholesterol Level]) and 2.0 years in Korean patients. Exposure duration to statin is a well-known driver for cardiovascular risk reduction. We report here the TST results in the French cohort. Methods— One thousand seventy-three French patients were assigned to 〈 70 mg/dL (1.8 mmol/L) and 1075 to 100±10 mg/dL (90–110 mg/dL, 2.3–2.8 mmol/L). To achieve these goals, investigators used the statin and dosage of their choice and added ezetimibe on top if needed. The primary outcome was the composite of ischemic stroke, myocardial infarction, new symptoms requiring urgent coronary or carotid revascularization and vascular death. Results— After a median follow-up of 5.3 years, the achieved LDL cholesterol was 66 (1.69 mmol/L) and 96 mg/dL (2.46 mmol/L) on average, respectively. The primary end point occurred in 9.6% and 12.9% of patients, respectively (HR, 0.74 [95% CI, 0.57–0.94]; P =0.019). Cerebral infarction or urgent carotid revascularization following transient ischemic attack was reduced by 27% ( P =0.046). Cerebral infarction or intracranial hemorrhage was reduced by 28% ( P =0.023). The primary outcome or intracranial hemorrhage was reduced by 25% ( P =0.021). Intracranial hemorrhages occurred in 13 and 11 patients, respectively (HR, 1.17 [95% CI, 0.53–2.62]; P =0.70). Conclusions— After an ischemic stroke of documented atherosclerotic origin, targeting a LDL cholesterol of 〈 70 mg/dL during 5.3 years avoided 1 subsequent major vascular event in 4 (number needed to treat of 30) and no increase in intracranial hemorrhage. Registration— URL: https://www.clinicaltrials.gov ; Unique identifier: NCT01252875.
    Type of Medium: Online Resource
    ISSN: 0039-2499 , 1524-4628
    RVK:
    Language: English
    Publisher: Ovid Technologies (Wolters Kluwer Health)
    Publication Date: 2020
    detail.hit.zdb_id: 1467823-8
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