In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 1R ( 1997-01-01), p. 294-
Abstract:
Pt films, as bottom electrodes for PZT capacitors, were deposited on Ti/SiO 2 /Si substrates using DC magnetron sputtering under various deposition conditions. The effects of post-annealing on surface morphology, element diffusion, microstructure and structural phase of the Pt films were investigated. The structure and electrical properties of PZT films deposited on Pt/Ti/SiO 2 /Si electrodes were also studied. As the deposition temperature of the Pt film increases and the deposition rate decreases, the film becomes dense so that Ti out-diffusion and film deformation are suppressed. The out-diffused Ti faciliates the formation of nucleation sites for perovskite PZT films. However, excess Ti out-diffusion not only decreases the total capacitance of the PZT films due to formation of an interfacial layer having a low dielectric constant but also degrades the leakage current characteristics of the PZT films due to deformation of the Pt electrode.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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