In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 3S ( 2013-03-01), p. 03BB01-
Abstract:
We investigated hydrogenation of low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) from the point of view of the gettering phenomenon, specifically, using self-aligned metal double-gate p-channel LT poly-Si TFTs that had a small subthreshold swing value and a high field-effect mobility. Hydrogenation of TFTs was carried out by forming gas annealing. Our results indicate that the conventionally used hydrogenation temperature of 400 °C is considerably high because annealing at this temperature results in the re-emission of gettered hydrogen. Moreover, when annealing in forming gas, hydrogenation actually occurs during cooling from 400 °C, but not at 400 °C. The most important parameter for effective hydrogenation is the rate of cooling from 400 °C, but not the hydrogenation temperature of 400 °C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.03BB01
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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