In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 9A ( 1993-09-01), p. L1286-
Abstract:
A buried layer of crystalline SiC in silicon wafer is synthesized by 1.5 MeV C + implantation at a dose of 1.5×10 18 ions/cm 2 at a high temperature of 880°C. The infrared absorption spectrum and the X-ray diffraction pattern of this sample show formation of 3C-type SiC crystal. The pole figures of X-ray diffraction show that crystallographic orientation of the SiC buried layer is aligned along the lattice of the Si substrate, that is, topotaxial internal growth of crystalline SiC occurs in a single crystal of Si during the high-temperature ion implantation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1286
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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