In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 11R ( 2012-11-01), p. 115202-
Abstract:
Nanocrystalline silicon quantum dots (nc-Si QDs) with various sizes and various doping concentrations were fabricated by supplying different flow rates of silane (SiH 4 ) gas and phosphine (PH 3 ) gas, respectively, under very high frequency (VHF; 144 MHz) plasma. With an increase in the flow rate of SiH 4 gas, the mean size of nc-Si QDs decreases, and photoluminescence (PL) measurements and time-resolved photoluminescence (TRPL) measurements confirm that the quantum confinement becomes weaker. For a small amount of doping PH 3 gas, termination of dangling bonds at the interface between the crystal core and the oxide shell in the nc-Si QDs could be supposed on the basis of PL and TRPL measurements. In contrast, for a large amount of doping PH 3 gas, Auger recombination could dominate the luminescence properties of nc-Si QDs, and it could decrease the PL intensity and shorten the TRPL decay lifetime.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.115202
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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