In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2691-
Abstract:
Phase-change random access memory is considered a potential challenger for conventional memories, such as dynamic random access memory and flash memory due to its numerous advantages. Nevertheless, high reset current is the ultimate problem in developing high-density phase-change random access memory (PRAM). We focus on the adoption of Ge 2 Sb 2 Te 5 confined structures to achieve lower reset currents. By changing from a normal to a GST confined structure, the reset current drops to as low as 0.8 mA. Eventually, our integrated 64 Mb PRAM based on 0.18 µm CMOS technology offers a large sensing margin: R reset ∼200 kΩ and R set ∼2 kΩ, as well as reasonable reliability: an endurance of 1.0×10 9 cycles and a retention time of 2 years at 85°C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2691
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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