In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4404-
Abstract:
A new doping process, molecular layer doping (MLD), allows for formation of extremely shallow junctions. We have studied the composition and growth mechanisms of boron layers formed on a Si substrate through the MLD process using diborane as the boron feed gas. At temperatures below 600°C, a pure boron layer is formed through the deposit of boron generated through thermal decomposition of diborane. At temperatures over 700°C, the boron layer contained silicon. At 800°C, a boron silicide layer is formed through reaction of boron with the silicon in the substrate. The growth rate of a boron silicide layer depends on the orientation of the Si substrate. However, that of a pure boron layer does not depend on the orientation. The composition of the layer after annealing at 900°C was analyzed using the RBS method and was found to be SiB 6 . Results of MLD processes on several kinds of underlying layers ( e.g. , SiO 2 , Si 3 N 4 , poly-Si) are also presented.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4404
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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