In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8R ( 1997-08-01), p. 5365-
Abstract:
A non-destructive characterization method for epitaxial wafers of vertical-cavity surface-emitting laser (VCSEL) before device processing, and a way for reproducible fabrication of the distributed Bragg reflector (DBR) using this method, are discussed. The DBR, active layer, and cavity length are successfully characterized by using YAG-laser-excited PL measurement and reflectivity-spectrum measurement. For a buried-heterostructure VCSEL, cavity length is evaluated by using a newly assembled small-area-spectral-reflectance measurement system. It is also shown that the cavity length can be tuned by using chemical etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.5365
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink