In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7B ( 2000-07-01), p. L710-
Abstract:
Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E 2 phonon of -(2.22±0.02)×10 -2 cm -1 /K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L710
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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