In:
Journal of Applied Physics, AIP Publishing, Vol. 105, No. 5 ( 2009-03-01)
Abstract:
We have fabricated InN thin films using rf magnetron sputtering from an indium (In) metal target. Optical and electrical measurements show that these as-grown films are n-type with carrier concentrations ranging from 1020 to 1021 cm−3. This variation in carrier density is produced by controlling the conditions during the deposition. We used Rutherford backscattering spectrometry to identify possible sources for n-type carriers. We found that in addition to strong direct bandgap optical absorption ranging from 1.4 to 2.0 eV, a large plasmon absorption peak in the infrared region (0.45–0.8 eV) is also observed. This tunable IR absorption suggests that these highly degenerate InN films could be used for a number of applications, including optical filters and infrared devices.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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