In:
ECS Transactions, The Electrochemical Society, Vol. 6, No. 13 ( 2007-11-21), p. 43-50
Abstract:
The thin-film-transistor (TFT) was utilized to confirm that oxidation enhanced the SiGe drive current. It shows the incensement of current by the condition of higher temperature and longer oxidation time. The study above employed to the SiGe nanowire. The SiGe nanowire was fabricated by spacer technique and oxidized at different temperatures and times. All the SiGe films with different Ge concentrations were deposited on SiO2 by cold-wall ultrahigh vacuum chemical vapordeposition (UHVCVD). We utilize scanning electron microscopy (SEM) to observe the silicon germanium nanowire's size. In addition, from I-V measurement, it also shows that the current is improved for SiGe nanowire after oxidation.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2007
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