In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 5S ( 2012-05-01), p. 05EC03-
Abstract:
Integration of an organic non-porous ultralow- k dielectric, fluorocarbon ( k = 2.2), into advanced Cu interconnects was demonstrated. The challenges of process-induced damage, such as delamination and variances of both the structure and electrical properties of the fluorocarbon during fabrication, were investigated on Cu/fluorocarbon damascene interconnects. A titanium-based barrier layer, instead of a tantalum-based barrier layer, was used to avoid delamination between Cu and fluorocarbon in Cu/fluorocarbon interconnects. A moisture-hermetic dielectric protective layer was also effective to avoid damage induced by wet chemical cleaning. On the other hand, a post-etching nitrogen plasma treatment to form a stable protective layer on the surface of the fluorocarbon was proposed for the practical minimization of damage introduction to fluorocarbon in the following damascene process, such as post-etching cleaning.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.05EC03
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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