In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 54, No. 8 ( 2005), p. 3905-
Abstract:
In this work, the abnormal double-peak in the electroluminescence spectra of In xGa1-xN/GaN multiple quantum wells (MQWs) light emitting d iode s tructure materials with high indium contents was studied under different injecti on currents. The results show that the screening of internal electric field by i njection current plays an important role in the radiation recombination process of InxGa1-xN/GaN-MQWs materials.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2005
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