In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 6S ( 2011-06-01), p. 06GF17-
Abstract:
New GaN Schottky barrier diodes (SBDs) on Si substrates are proposed to achieve a high-breakdown voltage. We have fabricated GaN SBDs using doped GaN/unintentionally doped (UID) GaN because doped GaN with the thickness of 200 nm is suitable for high-current operation. The 1-µm-deep mesa and low-temperature annealing of ohmic contacts suppress the leakage current of GaN SBDs. Annealing of Schottky contacts also improves the interface between a Schottky contact and GaN. Annealing of ohmic contacts at 670 °C yields the low leakage current of 2.8 nA through the surface and the buffer. When the anode–cathode distance is 5 µm, the fabricated GaN SBD successfully achieves a low forward voltage drop of 1.3 V at 100 A/cm 2 , low on-resistance of 4.00 mΩ cm 2 , and the low leakage current of 0.6 A/cm 2 at -100 V. The measured breakdown voltage of GaN SBDs is approximately 400 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.06GF17
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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