In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4S ( 2001-04-01), p. 2663-
Abstract:
The primary candidate for the barrier/etch stop layer in damascene process is silicon nitride. However, silicon nitride has a high dielectric constant. To reduce the effective dielectric constant in the copper damascene structure, silicon carbide, which is prepared by plasma enhanced chemical vapor deposition (PECVD) using 3 methyl silane source (Z3MS), is studied for the dielectric copper diffusion barrier. The dielectric constant of PECVD α-SiC:H is varied from 4.0 to 7.0 and the fourier transform infrared (FTIR) spectra peak intensity ratio of Si–CH 3 bond to Si–C is also examined. The reduction in dielectric constant of α-SiC:H using 3MS gas seems to be related to the decreased density upon incorporation of Si–CH 3 groups. The value of capacitance with α-SiC is 8–10% lower than that with PECVD SiN. The leakage current with α-SiC:H barrier is lower by 1 order of magnitude than that with PECVD SiN barrier.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2663
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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