In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12A ( 1998-12-01), p. L1424-
Abstract:
Lasing action in an In 0.1 Ga 0.9 N vertical cavity surface
emitting laser was successfully achieved, for the first time, at a wavelength of 381 nm. The 3λ vertical cavity comprising an In 0.1 Ga 0.9 N active
region was grown on a GaN/Al 0.34 Ga 0.66 N quarter-wave reflector by
metal organic chemical vapor deposition (MOCVD), and covered with a TiO 2 /SiO 2 reflector by electron-beam evaporation. The laser was
operated at 77 K under optical excitation. We have observed a significant narrowing of the emission spectrum from 2.5 nm below the threshold to 0.1 nm (resolution limit)
above the threshold, which is a clear signature of lasing action.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L1424
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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