In:
Small, Wiley, Vol. 16, No. 41 ( 2020-10)
Abstract:
Organometallic and all‐inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current–voltage hysteresis caused by fast ion migration. Lead‐free and all‐inorganic HPs have been researched for non‐toxic and environmentally friendly RS memory devices. However, only HP‐based devices with electrochemically active top electrode (TE) exhibit ultra‐low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air‐stable lead‐free all‐inorganic dual‐phase HP (AgBi 2 I 7 ‐Cs 3 Bi 2 I 9 ) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting‐bridge involving Ag cations in HPs with ultra‐low operating voltages ( 〈 0.15 V), high on/off ratio ( 〉 10 7 ), multilevel data storage, and long retention times ( 〉 5 × 10 4 s). The use of a closed‐loop pulse switching method improves reversible RS properties up to 10 3 cycles with high on/off ratio above 10 6 . With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead‐free all‐inorganic HP‐based nonvolatile memory devices for practical applications.
Type of Medium:
Online Resource
ISSN:
1613-6810
,
1613-6829
DOI:
10.1002/smll.202003225
Language:
English
Publisher:
Wiley
Publication Date:
2020
detail.hit.zdb_id:
2168935-0
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