In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4R ( 1997-04-01), p. 2073-
Abstract:
Hydrogenated amorphous silicon nitride ( a-SiN x :H) films fabricated by plasma-enhanced chemical vapor deposition (PECVD) at low temperatures ( 〈 150° C) tend to be oxidized within one month because of their porous structure which permits the percolation of H 2 O (moisture) molecules from air. The a-SiN x :H film deposited at a low temperature of 100° C oxidizes more quickly (within 1 day) due to its greater porosity. However, it is found that a very thin coating ( 〉 6.4 nm) of PECVD a-Si:H can prevent the percolation of H 2 O molecules. Hence, for a-Si:H thin film transistor (TFT) with a 100° C-deposited 470-nm-thick a-SiN x :H passivation layer, the ON/OFF current ratio will be degraded by ∼2 orders of magnitude after 7 days of exposure to air. On the other hand, for the 100° C-deposited a-SiN x :H passivation layer with an additional 100° C-deposited 50-nm-thick a-Si:H coating, the measured ON/OFF current ratio does not show any sings of degradation for up to one week. Therefore, a novel low-temperature ( 〈 150° C) water-resistant a-Si:H coating on a a-SiN x :H passivation layer deposited at the same temperature, which can be consecutively processed using the same PECVD system without breaking the vacuum, is proposed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2073
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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